Insitustress measurement of refractory metal silicides during sintering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333326
Reference7 articles.
1. 1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspective
2. Refractory silicides for integrated circuits
3. Refractory silicides of titanium and tantalum for low-resistivity gates and interconnects
4. Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride films
5. Tantalum silicide films deposited by dc sputtering
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