Group IV heteroepitaxy on silicon for photonics
Author:
Abstract
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference48 articles.
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2. Extension of spectral sensitivity of GeSn IR photodiode after laser annealing;Applied Surface Science;2021-07
3. One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate;Nanomaterials;2021-04-02
4. Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer;Journal of Applied Physics;2020-09-21
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