Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4801981
Reference27 articles.
1. Academic and industry research progress in germanium nanodevices
2. Recent progress in lasers on silicon
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4. Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results
5. Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers
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