Extension of spectral sensitivity of GeSn IR photodiode after laser annealing-Reference-Cited by-同舟云学术

Extension of spectral sensitivity of GeSn IR photodiode after laser annealing

Published:2021-07 Issue: Volume:555 Page:149711
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ščajev Patrik,Onufrijevs Pavels,Mekys Algirdas,Malinauskas Tadas,Augulis Dominykas,Subačius Liudvikas,Lee Kuo-Chih,Kaupuzs Jevgenijs,Varnagiris Sarunas,Medvids Arturs,Hsiang Cheng Hung

Funder

Taiwan Ministry of Science and Technology

European Regional Development Fund

State Education Development Agency Republic of Latvia

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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3. Highly Enhanced SWIR Image Sensors Based on Ge 1–x Sn x -Graphene Heterostructure Photodetector;Yang;ACS Photonics.,2019

4. Advanced GeSn/SiGeSn Group IV Heterostructure Lasers;von den Driesch;Adv. Sci.,2018

5. Competitiveness between direct and indirect radiative transitions of Ge;Cheng;Appl. Phys. Lett.,2010

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