Competitiveness between direct and indirect radiative transitions of Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3352048
Reference12 articles.
1. Room‐temperature electroluminescence from Si/Ge/Si1−xGex quantum‐well diodes grown by molecular‐beam epitaxy
2. Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes
3. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
4. Efficient silicon light-emitting diodes
5. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
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