Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer-Reference-Cited by-同舟云学术

Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer

Published:2020-09-21 Issue:11 Volume:128 Page:115103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ščajev Patrik¹^ORCID,Soriūtė Vaiva¹,Kreiza Gediminas¹^ORCID,Malinauskas Tadas¹^ORCID,Stanionytė Sandra²^ORCID,Onufrijevs Pavels³^ORCID,Medvids Arturs³^ORCID,Cheng Hung-Hsiang⁴^ORCID

Affiliation:

1. Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio av. 3, LT-10257 Vilnius, Lithuania

2. Center for Physical Sciences and Technology, Sauletekio av. 3 LT-10257 Vilnius, Lithuania

3. Institute of Technical Physics, Faculty of Materials Science and Applied Chemistry, Riga Technical University, P. Valdena 3/7, Riga LV-1048, Latvia

4. Center for Condensed Matter Sciences and Graduate Institute of Electronic Engineering, National Taiwan University, Roosevelt Road No. 1, Section 4, Taipei 10617, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Lietuvos Mokslo Taryba

State Education Development Agency (SEDA), Latvia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0019861

Reference48 articles.

1. Thin Films on Silicon

2. Group IV heteroepitaxy on silicon for photonics

3. GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

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