Author:
Dragoi Viorel,Mittendorfer Gerald,Filbert Alexander,Wimplinger Markus
Abstract
AbstractBackside illuminated CMOS image sensors were developed in order to encompass the pixel area limitation due to metal interconnects. In this technology the fully processed CMOS wafer is bonded to a blank carrier wafer and then back-thinned in order to open the photosensitive sensor area. The process flows of the two main competing wafer bonding technologies used for this manufacturing process (adhesive bonding and low temperature plasma activated direct wafer bonding with polymer layers) will be reviewed.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
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1. Wafer-bonding equipment;Handbook of Silicon Based MEMS Materials and Technologies;2020
2. Pre-bond megasonic cleaning with improved process control;Microsystem Technologies;2013-11-24
3. Advanced Process Control in Megasonic- Enhanced Pre-Bonding Cleaning;ECS Transactions;2013-03-15
4. Plasma-Activated Bonding;Handbook of Wafer Bonding;2012-02-08