Author:
Baine Paul T.,Bain Michael,McNeill D. W.,Gamble Harold S,Armstrong Mervyn
Abstract
The bonding of plasma enhanced chemical vapor deposition (PECVD) silicon dioxide layers, deposited at 300oC, to thermal silicon dioxide layers is described. The PECVD oxide requires pre-bond annealing and CMP for void free bonding. Post bond annealing for bond strengthening must be performed at a lower temperature than the pre-bond annealing step. Bond strengths of 1J/m2 have been achieved after bond annealing at 400oC. This bonding method can be used in layer/circuit transfer and has been demonstrated with the transfer of a 2µm SOI layer from one substrate to another.
Publisher
The Electrochemical Society
Cited by
3 articles.
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