Electric current-induced abnormal Cu/γ-InSn4 interfacial reactions

Abstract

The electromigration effect upon the γ-InSn4/Cu interfacial reactions have been studied by examining the γ-InSn4/Cu/γ-InSn4 couples annealed at 160 °C with and without current stressing. Scallop-type η-Cu6(Sn,In)5 phase layers are formed in the couples without current stressing and at the γ-InSn4/Cu interface where electrons are flowing from the γ-InSn4 to the Cu. The reaction path is Cu/η-Cu6(Sn,In)5/γ-InSn4. However, very large η-Cu6(Sn,In)5 compounds are found at the Cu/γ-InSn4 interface where electrons are from Cu to the γ-InSn4. Although the melting points of both γ-InSn4 and Cu are higher than 160 °C, the liquid phase is formed at 160 °C in the electrified couple at the downstream γ-InSn4 phase near the Cu/γ-InSn4 interface. The reaction path is Cu/η-Cu6(Sn,In)5/liquid/γ-InSn4. The liquid phase propagates along the grain boundaries of the γ-InSn4 matrix. The very large η-Cu6(Sn,In)5 compounds are the coupling results of the liquid phase penetration and the Cu transport enhancement due to electromigration.