On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces-Reference-Cited by-同舟云学术

On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces

Published:1999 Issue: Volume:572 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Masri P.,Moreaud N.,Averous M.,Stauden Th.,Wohner T.,Pezoldt J.

Abstract

ABSTRACT3C-SiC/Si structures with Ge incorporation are elaborated by solid source molecular beam epitaxy (SSMBE). A comparison of the flatness of the SiC-surface and the interface between SiC and Si by comparing the deposition with and without Ge is made. The results are analyzed within the framework of a theoretical approach based on the theory of elasticity.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference14 articles.

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