Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemission
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.5974/fulltext
Reference30 articles.
1. Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering
2. Interface structure of epitaxial Ge–Si(111) system studied by high energy ion scattering
3. Molecular beam epitaxy and reconstructed surfaces
4. Rheed study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111)(7 × 7) surface
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