Interface structure of epitaxial Ge–Si(111) system studied by high energy ion scattering-Reference-Cited by-同舟云学术

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Interface structure of epitaxial Ge–Si(111) system studied by high energy ion scattering

Published:1982-03 Issue:3 Volume:20 Page:709-712
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Narusawa T.,Gibson W. M.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571636

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nucleation and growth of Ge on Si(111) in solid phase epitaxy;Thin Solid Films;2000-07

2. Effects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxy;Applied Surface Science;1998-06

3. Random adatom heights in surfaces;Surface Science;1996-05

4. Solid-phase epitaxial growth of Ge on H-terminated and oxidized Si(100) surfaces;Surface Science;1995-04

5. TEM Moiré Pattern and Scanning Auger Electron Microscope Analysis of Anomalous Si Incorporation into MBE-grown Ge on Si(111);Japanese Journal of Applied Physics;1992-10-15

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