In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)-Reference-Cited by-同舟云学术

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In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)

Published:2002-04 Issue: Volume:389-393 Page:725-728
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Weih Petia¹,Stauden Thomas²,Pezoldt Jörg²

Affiliation:

1. TU Ilmenau

2. Technische Universität Ilmenau

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.725.pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates;Materials Science Forum;2019-07

2. Original Ge-induced phenomena on various SiC(0 0 0 1) reconstructions;Journal of Physics D: Applied Physics;2007-10-05

3. Bidimensional intercalation of Ge between SiC(0001) and a heteroepitaxial graphite top layer;Physical Review B;2005-09-16

4. Epitaxy relationships between Ge-islands and SiC(0001);Applied Surface Science;2005-03

5. Ge epitaxial island growth on a graphitized C-rich 4H-SiC(0001) surface;Journal of Crystal Growth;2005-02

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