Exploring argon plasma effect on ferroelectric Hf0.5Zr0.5O2 thin film atomic layer deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://link.springer.com/content/pdf/10.1557/s43578-020-00074-5.pdf
Reference23 articles.
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2. R. Batra, T.D. Huan, G.A. Rossetti, and R. Ramprasad: Dopants promoting ferroelectricity in hafnia: Insights from a comprehensive chemical space exploration. Chem. Mater. 29, 9102 (2017).
3. P.D. Lomenzo, Q. Takmeel, C. Zhou, C.M. Fancher, E. Lambers, N.G. Rudawski, J.L. Jones, S. Moghaddam, and T. Nishida: TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films. J. Appl. Phys. 117, 134105 (2015).
4. M. Pešić and L. Larcher: Root Causes for Ferroelectricity in Doped HfO2 .In Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, U. Schroeder, C.S. Hwang and H. Funakubo, eds. (Woodhead Publishing, Cambridge, 2019), pp. 399–411.
5. T. Shiraishi, K. Katayama, T. Yokouchi, T. Shimizu, T. Oikawa, O. Sakata, H. Uchida, Y. Imai, T. Kiguchi, T.J. Konno, and H. Funakubo: Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films. Appl. Phys. Lett. 108, 262904 (2016).
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1. Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition;ACS Applied Electronic Materials;2023-09-07
2. Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching;ACS Applied Materials & Interfaces;2023-06-20
3. Effects of plasma power on ferroelectric properties of HfO2-ZrO2 nanolaminates produced by plasma enhanced atomic layer deposition;Surfaces and Interfaces;2023-04
4. Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor;Nanotechnology;2023-02-17
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