Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Author:

Guo Xiaowei1,Wang Fang1,Ma Zexia1,Shan Xin1,Lin Xin1,Ji Yujing1,Zhao Xuanyu2,Feng Yulin3,Han Yemei1,Xie Yangyang1,Song Zhitang4,Zhang Kailiang1ORCID

Affiliation:

1. Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

2. School of Microelectronics, Fudan University, Shanghai 200433, China

3. Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science and Technology University, Beijing 100192, China

4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Funder

Natural Science Foundation of Tianjin City

National Key Research and Development Program of China

Tianjin Science and Technology Program

National Natural Science Foundation of China

State Key Laboratory of Functional Materials for Information

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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