Carrier and Atomic Distributions in Si Implanted and Rapid Thermally Annealed InP ; Influence of Dual Implants of As or P

Abstract

ABSTRACTRapid thermal anneal (R.T.A.) by halogen lamps has been carried out to activate Si29 implants in semi-insulating InP substrates with the aim of realizing good contact areas at low depth (0.1 μm). To better understand the electrical behaviour of Si observed in these conditions, and to try to increase the electrical activity we performed dual implantations (As + Si or P + Si). The crystallographic disorder remaining after anneal and its influence on the electrical properties are discussed. The uniformity of activation has been evaluated by Hall effect and specific contact resistivity cartographies both for mono-implantations and for dual implantations.