Effects of background Fe concentrations in the annealing of ion‐implanted Si into InP substrates for InP metal‐insulator‐semiconductor field‐effect transistor applications-Reference-Cited by-同舟云学术

Effects of background Fe concentrations in the annealing of ion‐implanted Si into InP substrates for InP metal‐insulator‐semiconductor field‐effect transistor applications

Published:1989-08-15 Issue:4 Volume:66 Page:1855-1857
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Duhamel N.,Krauz P.,Gao Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.344359

Reference6 articles.

1. Carrier and Atomic Distributions in Si Implanted and Rapid Thermally Annealed InP ; Influence of Dual Implants of As or P

2. ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT

3. Uniformp‐type doping profiles in Mg+24‐implanted, rapidly annealed GaAs/AlGaAs heterostructures

4. Dose thresholds for implantation of iron‐doped indium phosphide

5. Silicon implantation in semi-insulating bulk InP; Electrical and photoluminescence measurements

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1. Deep level defects in n- and p-type Fe implanted InP;Physica A: Statistical Mechanics and its Applications;1997-08

2. Carrier compensation induced by rapid thermal annealing in undoped InP;Journal of Applied Physics;1994-01

3. A new encapsulation method of InP during post implantation annealing;Applied Surface Science;1993-05

4. Defect‐induced redistribution of Fe‐ or Ti‐implanted and annealed GaAs, InAs, GaP, and InP;Journal of Applied Physics;1992-10-15

5. Influence of iron content on electrical characteristics and thermal stability of LEC indium phosphide;Journal of Electronic Materials;1991-12