ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT
Author:
Publisher
EDP Sciences
Subject
General Engineering
Link
http://jphyscol.journaldephysique.org/10.1051/jphyscol:1988446/pdf
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride;Applied Surface Science;1993-01
2. Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride;Semiconductor Materials Analysis and Fabrication Process Control;1993
3. Ultraviolet‐induced annealing of hydrogen bonds in silica films deposited at low temperatures;Applied Physics Letters;1992-07-20
4. Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition;Semiconductor Science and Technology;1992-04-01
5. Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devices;Materials Science and Engineering: B;1991-07
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