Ultraviolet‐induced annealing of hydrogen bonds in silica films deposited at low temperatures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107920
Reference11 articles.
1. Indirect plasma deposition of silicon dioxide
2. ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT
3. A combination of rapid thermal processing and photochemical deposition for the growth of SiO2suitable for InP device applications
4. Photo-assisted deposition of thin films on III–V semiconductors with UV and IR lamps
5. UV annealing of low temperature photodeposited SiO2 films with a new powerful lamp source
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1. Plasmachemical Dehydroxylation of High Surface Area Silica at Room Temperature;The Journal of Physical Chemistry B;2001-03-10
2. Optical and compositional study of silicon oxide thin films deposited in a dual-mode (microwave/radiofrequency) plasma-enhanced chemical vapor deposition reactor;Journal of Applied Physics;1998-05-15
3. UV-induced reaction of H2 with germanosilicate and aluminosilicate glasses;Journal of Non-Crystalline Solids;1998-04
4. Nonequilibrium Plasma Activation of Supported Cr(III) Phillips Catalyst Precursors;The Journal of Physical Chemistry B;1997-11-01
5. Characterization of as‐grown and annealed thin SiO2 films formed in 0.1 M HCl;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-07
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