A combination of rapid thermal processing and photochemical deposition for the growth of SiO2suitable for InP device applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346976
Reference27 articles.
1. Laser‐induced chemical vapor deposition of SiO2
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3. Low-Temperature Growth of Silicon Dioxide Film by Photo-Chemical Vapor Deposition
4. Theoretical and experimental investigations on the deposition rate and processes of parallel incident laser-induced CVD
5. UV Irradiation Effects on Chemical Vapor Deposition of SiO2
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1. Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models;Applied Physics Reviews;2019-03
2. Electrical Improvements of MOCVD-TiO[sub 2] on (NH[sub 4])[sub 2]S[sub x]-Treated InP with Postmetallization Annealing;Journal of The Electrochemical Society;2007
3. Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition;Journal of Electronic Materials;2002-12
4. Deposition of sol-gel-derived inorganic and composite material films on InP for integrated optics;SPIE Proceedings;1999-11-12
5. Experimental comparison of the properties and applications of sol-gel-derived inorganic and organic modified silica films on InP;SPIE Proceedings;1999-10-27
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