Laser-Induced Fluorescence Diagnostics of CF4/O2/H2 Plasma Etching

Abstract

ABSTRACTLaser-induced fluorescence experiments have been carried out during CF4/O2/H2 plasma etching of Si and SiO2. Measurements of relative CF2 radical concentrations as a function of rf power, frequency, pressure, and gas composition are reported. The results are correlated with etch rates of Si and SiO2. The balance between CF2 and F concentrations is shown to influence the etching process strongly.