Investigation of Low-Pressure Sn-Passivated Cu-to-Cu Direct Bonding in 3D-Integration

Abstract

Cu-to-Cu direct bonding plays an important role in three-dimensional integrated circuits (3D IC). However, the bonding process always requires high temperature, high pressure, and a high degree of consistency in height. In this study, Sn is passivated over electroplated copper. Because Sn is a soft material and has a low melting point, a successful bond can be achieved under low temperature and low pressure (1 MPa) without any planarization process. In this experiment, Sn thickness, bonding temperature, and bonding pressure are variables. Three values of thicknesses of Sn, i.e., 1 μm, 800 nm, and 600 nm were used to calculate the minimum value of Sn thickness required to compensate for the height difference. Additionally, the bonding process was conducted at two temperatures, 220 °C and 250 °C, and their optimized parameters with required pressure were found. Moreover, the optimized parameters after the Cu planarization were also investigated, and it was observed that the bonding can succeed under severe conditions as well. Finally, transmission electron microscopy (TEM) was used to observe the adhesion property between different metals and intermetallic compounds (IMCs).