3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias-Reference-Cited by-同舟云学术

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3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
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Author:

Swinnen B.,Ruythooren W.,De Moor P.,Bogaerts L.,Carbonell L.,De Munck K.,Eyckens B.,Stoukatch S.,Tezcan D. Sabuncuoglu,Tokei Z.,Vaes J.,Van Aelst J.,Beyne E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154205.pdf?arnumber=4154205

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Invited Paper: 2023 ICCAD CAD Contest Problem B: 3D Placement with Macros;2023 IEEE/ACM International Conference on Computer Aided Design (ICCAD);2023-10-28

4. Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application;Nanomaterials;2023-09-04

5. Effects of Surface Contaminants on Bonding Strength for Direct Cu-Cu Bonding With Passivation Layer;2023 International Conference on Electronics Packaging (ICEP);2023-04-19

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