Abstract
Whether from a device physics, fabrication technology, or process economics point of view, the practice of downsizing silicon-based CMOS devices will soon end [...]
Funder
City University of Hong Kong, Hong Kong SAR, China
Subject
General Materials Science,General Chemical Engineering
Reference12 articles.
1. Wong, H. (2021, January 12–14). On the CMOS Device Downsizing, More Moore, More than Moore, and More-than-Moore for More Moore. Proceedings of the 2021 IEEE 32nd International Conference on Microelectronics (MIEL), Nis, Serbia.
2. Radamson, H.H., Zhu, H., Wu, Z., He, X., Lin, H., Liu, J., Xiang, J., Kong, Z., Xiong, W., and Li, J. (2020). State of the Art and Future Perspectives in Advanced CMOS Technology. Nanomaterials, 10.
3. Wong, H., and Kakushima, K. (2022). On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node. Nanomaterials, 12.
4. Wong, H., Zhang, J., Iwai, H., and Kakushima, K. (2021). Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices. Nanomaterials, 11.
5. Ye, P.D., Ernst, T., and Khare, M.V. (IEEE Spectrum, 2019). The Nanosheet Transistor Is the Next and Maybe Last Step in Moores-Law, IEEE Spectrum.
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