New small‐signal extraction method applied to GaN HEMTs on different substrates
Author:
Affiliation:
1. School of Electrical Engineering and Computer ScienceUniversity of Ottawa Ottawa Ontario Canada
2. Department of Electrical and Biomedical EngineeringUniversity of Nevada Reno Nevada USA
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.22291
Reference34 articles.
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3. An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-04-26
4. A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements;Electronics;2023-04-08
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