Hybrid small-signal model parameter extraction for GaN HEMT-on-Si Substrates based on the SPF method
Author:
Funder
Basic and Applied Basic Research Foundation of Guangdong Province
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10825-024-02168-3.pdf
Reference20 articles.
1. Kaule, E., Yazdani, H., Rudolph, M.: Highly linear concurrent tri-band GaN LNA MMIC for 0.8/1.8/3.6 GHz applications. In: 2022 24th International Microwave and Radar Conference (MIKON), pp. 1–3 (2022). https://doi.org/10.23919/MIKON54314.2022.9924770
2. Husna, H.K., Nirmal, D., Merlin Gilbert Raj, S., Ajayan, J., Arivazhagan, L., Augustine Fletcher, A.S.: 6 GHZ GAN HEMT linear power amplifier. In: 2021 3rd International Conference on Signal Processing and Communication (ICPSC), pp. 219–222 (2021). https://doi.org/10.1109/ICSPC51351.2021.9451754
3. Zhao, Z.-M., Zhu, X.-W.: Parasitic parameters extraction and compensation for broadband high-efficiency mm-wave GaN MMIC PA design. In: 2023 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), pp. 151–153 (2023). https://doi.org/10.1109/NEMO56117.2023.10202484
4. Lu, H., Hou, B., Yang, L., Zhang, M., Deng, L., Wu, M., Si, Z., Huang, S., Ma, X., Hao, Y.: High RF performance GaN-on-Si HEMTs with passivation implanted termination. IEEE Electron Device Lett. 43(2), 188–191 (2022). https://doi.org/10.1109/LED.2021.3135703
5. Florian, C., Traverso, P.A., Santarelli, A.: A ka-band MMIC LNA in GaN-on-Si 100-nm technology for high dynamic range radar receivers. IEEE Microw. Wirel. Compon. Lett. 31(2), 161–164 (2021). https://doi.org/10.1109/LMWC.2020.3047152
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