Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Small-signal modeling of microwave transistors using radial basis function artificial neural network-comparison of different methods for spread constant determined;Qi;Int. J. RF Microw. Computer-Aided Eng.,2022
2. A novel physics-based approach to analyze and model E-mode p-GaN power HEMTs;Modolo;IEEE Trans. Electron. Dev.,2021
3. A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model;Zhai;Int. J. RF Microw. Computer-Aided Eng.,2022
4. Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: an accurate, fast, and reliable approach;Khusro;Int. J. RF Microw. Computer-Aided Eng.,2019
5. Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers;Jarndal;Int. J. Numer. Model. Electron. Network. Dev. Field.,2020
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献