A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model
Author:
Affiliation:
1. Electrical Engineering College Henan University of Science and Technology Luoyang China
2. Novaco Microelectronics Technologies Ltd. Nantong China
Funder
National Natural Science Foundation of China
Publisher
Hindawi Limited
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.23210
Reference38 articles.
1. Small‐signal modeling of microwave transistors using radial basis function artificial neural network‐comparison of different methods for spread constant determined
2. A Generic and Efficient Globalized Kernel Mapping-Based Small-Signal Behavioral Modeling for GaN HEMT
3. A fast small signal modeling method for GaN HEMTs
4. A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs
5. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping
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