A reliable parameter extraction method for the augmented <scp>GaN</scp> high electron mobility transistor small‐signal model-Reference-Cited by-同舟云学术

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

Published:2022-04-28 Issue:8 Volume:32 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Mic Comp-Aid Eng

Author:

Zhai Lili¹^ORCID,Cai Haiyi¹,Wang Shaowei¹,Zhang Jincan¹^ORCID,Yang Shi²

Affiliation:

1. Electrical Engineering College Henan University of Science and Technology Luoyang China

2. Novaco Microelectronics Technologies Ltd. Nantong China

Funder

National Natural Science Foundation of China

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

Reference38 articles.

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4. On Temperature-Dependent Small-Signal Behavioral Modelling of GaN HEMT Using GWO-PSO and WOA;2023 International Symposium on Networks, Computers and Communications (ISNCC);2023-10-23