Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs-Reference-Cited by-同舟云学术

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Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs

Published:2023 Issue: Volume:11 Page:106833-106846
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Husain Saddam¹^ORCID,Jarndal Anwar²^ORCID,Hashmi Mohammad¹^ORCID,Ghannouchi Fadhel M.³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Astana, Kazakhstan

2. Department of Electrical Engineering, University of Sharjah, Sharjah, United Arab Emirates

3. Department of Electrical and Computer Engineering, University of Calgary, Calgary, Canada

Funder

Nazarbayev University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10256192.pdf?arnumber=10256192

Reference40 articles.

1. Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

2. Modelling of GaN high electron mobility transistor on diamond substrate

3. Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

4. Reliable Hybrid Small-Signal Modeling of GaN HEMTs Based on Particle-Swarm-Optimization

5. Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

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1. A new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm;IEICE Electronics Express;2024-09-10

2. Evaluating Nine Machine Learning Algorithms for GaN HEMT Small Signal Behavioral Modeling through K-fold Cross-Validation;Engineering, Technology & Applied Science Research;2024-08-02

3. Pelican Optimization Algorithm-Based Proportional–Integral–Derivative Controller for Superior Frequency Regulation in Interconnected Multi-Area Power Generating System;Energies;2024-07-05

4. Behavioral-level modelling of GaN HEMT large signal based on Pelican-Gaussian process regression algorithm;Microelectronics Journal;2024-01

5. Comparison of ANFIS and ANN for Small-Signal Modelling of GaN HEMT up to 40 GHz;2023 International Conference on Microelectronics (ICM);2023-12-17

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