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Modelling of GaN high electron mobility transistor on diamond substrate

  • Published:2021-03-22 Issue:6 Volume:15 Page:661-673
  • ISSN:1751-8725
  • Container-title:IET Microwaves, Antennas & Propagation
  • language:en
  • Short-container-title:IET microw. antennas propagation

Author:

Jarndal Anwar1ORCID,Du Xuekun2,Xu Yuehang3

Affiliation:

1. Department of Electrical Engineering, University of Sharjah Sharjah United Arab Emirates

2. Department of Electrical and Computer Engineering University of Calgary Calgary Canada

3. University of Electronic Science and Technology of China Chengdu People's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Response and Power Dissipation in GaN HEMT on Diamond Substrate;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02

2. On large-signal modeling of GaN HEMTs: past, development and future;Chip;2023-09

3. Modeling of HEMT Devices Through Neural Networks: Headway for Future Remedies;2023 10th International Conference on Electrical and Electronics Engineering (ICEEE);2023-05-08

4. Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs;IEEE Journal of the Electron Devices Society;2023

5. Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs;IEEE Access;2023
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