Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs
Author:
Affiliation:
1. School of Engineering and Digital Sciences, Nazarbayev University, Astana, Kazakhstan
2. Department of Electrical Engineering, University of Sharjah, Sharjah, UAE
Funder
Nazarbayev University through CRP
FDRG
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10283862.pdf?arnumber=10283862
Reference35 articles.
1. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model
2. An efficient parameter extraction method for GaN HEMT small-signal equivalent circuit model
3. An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Comparison of ANFIS and ANN for Small-Signal Modelling of GaN HEMT up to 40 GHz;2023 International Conference on Microelectronics (ICM);2023-12-17
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