Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs
Author:
Affiliation:
1. School of Engineering and Digital Sciences, Nazarbayev University, Astana, Kazakhstan
2. Department of Electrical Engineering, University of Sharjah, Sharjah, UAE
Funder
Nazarbayev University through CRP
FDRG
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10283862.pdf?arnumber=10283862
Reference35 articles.
1. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model
2. An efficient parameter extraction method for GaN HEMT small-signal equivalent circuit model
3. An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On efficient modeling of drain current for designing high-power GaN HEMT-based circuits;Journal of Computational Electronics;2024-09-09
2. Evaluating Nine Machine Learning Algorithms for GaN HEMT Small Signal Behavioral Modeling through K-fold Cross-Validation;Engineering, Technology & Applied Science Research;2024-08-02
3. Comparison of ANFIS and ANN for Small-Signal Modelling of GaN HEMT up to 40 GHz;2023 International Conference on Microelectronics (ICM);2023-12-17
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3