ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model-Reference-Cited by-同舟云学术

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ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

Published:2019-01 Issue:1 Volume:66 Page:80-86
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Khandelwal Sourabh^ORCID,Chauhan Yogesh Singh^ORCID,Fjeldly Tor A.,Ghosh Sudip,Pampori Ahtisham^ORCID,Mahajan Dhawal,Dangi Raghvendra^ORCID,Ahsan Sheikh Aamir^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8585319/08476221.pdf?arnumber=8476221

Cited by 91 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs;physica status solidi (a);2024-01-31

2. A Novel Tempreature-Included CSWPL Model for GaN HEMTs;2023 5th International Conference on Circuits and Systems (ICCS);2023-10-27

3. An Overview of Nonlinear Behavioral Modeling Approaches for Microwave GaN Power Transistors;2023 16th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS);2023-10-25

4. Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT;IEEE Transactions on Electron Devices;2023-10

5. Accurate Modelling of GaN HEMT Capacitances in the Framework of the ASMHEMT Model;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

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