Enhancement‐Mode β ‐Ga 2 O 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing-Reference-Cited by-同舟云学术

Enhancement‐Mode β ‐Ga 2 O 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

Published:2019-12-22 Issue:3 Volume:14 Page:1900586
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Lv Yuanjie¹^ORCID,Zhou Xingye¹,Long Shibing²,Wang Yuangang¹,Song Xubo¹,Zhou Xuanze²,Xu Guangwei²,Liang Shixiong¹,Feng Zhihong¹,Cai Shujun¹,Fu Xingchang¹,Pu Aimin¹,Liu Ming³

Affiliation:

1. National Key Laboratory of ASICHebei Semiconductor Research Institute Shijiazhuang 050051 China

2. School of MicroelectronicsUniversity of Science and Technology of China Hefei 230026 China

3. Key Laboratory of Microelectronics Devices & Integration TechnologyInstitute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900586

Reference18 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

3. Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga2O3Layers Grown by MOVPE on (010)-Oriented Substrates