High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure-Reference-Cited by-同舟云学术

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High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

Published:2018-01-15 Issue:3 Volume:112 Page:032101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yan Xiaodong¹^ORCID,Esqueda Ivan S.²,Ma Jiahui¹,Tice Jesse³,Wang Han¹

Affiliation:

1. Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA

2. Information Sciences Institute, University of Southern California, Marina del Rey, California 90292, USA

3. NG Next, Northrop Grumman Aerospace Systems, Redondo Beach, California 90278, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5002138

Reference34 articles.

1. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

2. High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

3. High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

5. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

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4. Optoelectronic Neuromorphic Logic Memory Device Based on Ga₂O₃/MoS₂ Van der Waals Heterostructure with High Rectification and On/Off Ratios;Advanced Functional Materials;2024-07-30

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