Effect of growth temperature on properties of β-Ga2O3 films grown on AlN by low-pressure chemical vapor deposition

Author:

Hu Jichao,Zhang Kewei,Yang Xiaodong,Xu Bei,Li Yao,Zhang Chao,Wang Xi,Wang Xinmei,He Xiaomin

Publisher

Elsevier BV

Reference33 articles.

1. Review of Ga2O3-based optoelectronic devices;Guo;Materials Today Physics,2019

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3. Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes;Li;APEX,2019

4. A general strategy to ultrasensitive Ga2O3 based self-powered solar-blind photodetectors;Wu;Materials Today Physics,2022

5. Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectors;Wu;Appl. Phys. Lett.,2022

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