Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

Published:2017-06-28 Issue:7 Volume:10 Page:071101
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Ahmadi Elaheh,Koksaldi Onur S.,Zheng Xun,Mates Tom,Oshima Yuichi,Mishra Umesh K.,Speck James S.

Funder

Air Force Office of Scientific Research

National Science Foundation

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=7/a=071101/pdf

Reference20 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

3. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

4. Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

5. Recent progress in Ga2O3power devices

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4. Achieving n-type doped monoclinic (InxAl1-x)2O3 alloys;Journal of Applied Physics;2024-06-17

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