Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer-Reference-Cited by-同舟云学术

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Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer

Published:2012-01-24 Issue:2 Volume:47 Page:139-144
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Zuo Sibin,Wang Jun,Chen Xiaolong,Jin Shifeng,Jiang Liangbao,Bao Huiqiang,Guo Liwei,Sun Wei,Wang Wenjun

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference37 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. MOCVD Growth of GaN on bulk AlN Substrates

3. On mechanisms of sublimation growth of AlN bulk crystals

4. Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight

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2. Comparative Study of AlN Crystals Grown on SiC Seeds with/without Voids at the Heterointerface;Crystal Growth & Design;2024-02-05

3. State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport;Journal of Crystal Growth;2023-09

4. Effects of substrate pretreatment and annealing processes on AlN thin films prepared by EVPE;Materials Science in Semiconductor Processing;2022-11

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