Comparative Study of AlN Crystals Grown on SiC Seeds with/without Voids at the Heterointerface-Reference-Cited by-同舟云学术

Comparative Study of AlN Crystals Grown on SiC Seeds with/without Voids at the Heterointerface

Published:2024-02-05 Issue:4 Volume:24 Page:1818-1824
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Han Yuante¹²^ORCID,Zhang Zhiwei¹³,Hu Weijie¹,Wang Wenjun²^ORCID,Guo Jian-gang¹^ORCID,Guo Liwei¹²^ORCID

Affiliation:

1. Research and Development Center for Functional Crystals, Beijing National laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. College of Electronic Information Engineering, Hebei University, Baoding 071002, China

Funder

Special Project for Research and Development in Key areas of Guangdong Province

Beijing Municipal Science and Technology Commission, Adminitrative Commission of Zhongguancun Science Park

National Outstanding Youth Science Fund Project of National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c01483

Reference23 articles.

1. High-excitation and high-resolution photoluminescence spectra of bulk AlN

2. Nonmetallic crystals with high thermal conductivity

3. Thermal expansion of AlN, sapphire, and silicon

4. Thermal Residual Stress Modeling in AlN and GaN Multi Layer Samples

5. Growth of AlN bulk single crystals on 4H-SiC substrates and analyses of their structural quality and growth mode evolution

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Control of AlN Single Crystal Growth on SiC Substrate;Crystal Growth & Design;2024-05-22