Influence of Temperature Field Distribution on the Growth of Aluminum Nitride Crystal by Simulation Technology

Abstract

During the crystal growth process, the temperature distribution in the reactor plays a decisive role in crystal growth and directly affects the crystal growth rate. In this study, a numerical simulation method was used to model and study the temperature distribution in the PVT AlN crystal reactor. By adjusting the relative position of the heater and the crucible, different temperature field structures are obtained. The effect of different temperature gradients on the decisiveness of the crystal growth and the growth rate is explored and analyzed, and the best scheme is selected. With the help of simulation technology, a 52 mm diameter AlN crystal is successfully prepared with a certain thickness. The results prove the feasibility of the simulation scheme, which is supported by the existing experimental data.