Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference41 articles.
1. Growth and applications of Group III-nitrides
2. Substrates for gallium nitride epitaxy
3. Fabrication and performance of GaN electronic devices
4. Characterization of threading dislocations in GaN epitaxial layers
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