Tunnelling assisted by Si-doped n-AlGaN layer on the p-side of 254 nm DUV LED-Reference-Cited by-同舟云学术

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Tunnelling assisted by Si-doped n-AlGaN layer on the p-side of 254 nm DUV LED

Published:2023-06-30 Issue:9 Volume:55 Page:
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Sharif M. Nawaz,Khan M. Ajmal,Wali Qamar,Ayub Khalid,Rani Malika,Wang Fang,Liu Yuhuai

Funder

Ningbo 2025 Key Innovation Project

Zhengzhou 1125 Innovation Project

National Nature Science Foundation of China

National Key Research and Development Program

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11082-023-04895-6.pdf

Reference46 articles.

1. Ajmal Khan, M., et al.: Influence of undoped-AlGaN Final barrier of MQWs on the performance of lateral-type UVB LEDs. Phys. Status Solidi 216(18), 1900185 (2019)

2. Ajmal Khan, M., Maeda, N., Yun, J., et al.: Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance. Sci. Rep. 12, 2591 (2022). https://doi.org/10.1038/s41598-022-04876-x

3. Ajmal Khan, M., et al.: Milliwatt-power AlGaN deep-UV light-emitting diodes at 254 nm emission as a clean alternative to mercury deep-UV lamps. Physi. status solidi 220(1), 2200621 (2023)

4. Ban, K., et al.: Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells. Appl. Phys. Express 4(5), 052101 (2011)

5. Chu, C., et al.: On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer. Opt. Express 27(12), A620–A628 (2019)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achieving zero efficiency droop in highly efficient N-polar AlGaN tunnel junction-based 254 nm DUV LED;Optics & Laser Technology;2025-01

2. Improving hole injection with the polarization effect for 279 nm AlGaN-based deep ultraviolet light-emitting diodes;Applied Physics B;2024-06-17

3. Advantages of AlGaN Tunnel Junction in N-Polar 284 nm Ultraviolet-B Light Emitting Diode;ECS Journal of Solid State Science and Technology;2024-06-03

4. Progress and Outlook of 10% Efficient AlGaN‐Based (290–310 nm) Band UVB LEDs;physica status solidi (a);2024-01-29

5. Facile synthesis and characterization of Al-MOFs using benzene-1,3,5-tricarboxylic acid as a new class of materials for Far-UVC applications;Modern Physics Letters B;2023-11-03

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