Growth and Properties of Intentionally Carbon‐Doped GaN Layers-Reference-Cited by-同舟云学术

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Published:2019-10-22 Issue:2 Volume:55 Page:1900129
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Richter Eberhard¹^ORCID,Beyer Franziska C.²,Zimmermann Friederike²,Gärtner Günter³,Irmscher Klaus⁴,Gamov Ivan⁴,Heitmann Johannes²,Weyers Markus¹,Tränkle Günther¹

Affiliation:

1. Ferdinand‐Braun‐Institut Leibniz‐Institut für Höchstfrequenztechnik Gustav‐Kirchhoff‐Str. 4 12489 Berlin Germany

2. Institute of Applied Physics TU Bergakademie Freiberg 09599 Freiberg Germany

3. Institute of Experimental Physics TU Bergakademie Freiberg 09599 Freiberg Germany

4. Leibniz‐Institut für Kristallzüchtung Max‐Born‐Strasse 2 12489 Berlin Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/crat.201900129

Reference34 articles.

1. a)https://www.nobelprize.org/uploads/2018/06/press-25.pdf(accessed: May 2019); b)http://www.semiconductor-today.com/news_items/2019/jan/yole_030119.shtml(accessed: May 2019); c)Yole Développement RF GaN Market: Applications Players Technology and Substrates 2019 Market & Technology Report May2019.

2. Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

3. Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

4. Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

5. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities;Semiconductor Science and Technology;2024-09-12

2. Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates;Electronics;2024-05-30

3. Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2024-04-01

4. Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy;physica status solidi (b);2024-03-11

5. Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes;IEEE Transactions on Electron Devices;2024-01