High Performance Self‐Driven Polarization‐Sensitive Photodetectors Based on GeAs/InSe Heterojunction
Author:
Affiliation:
1. Institute of Semiconductors South China Normal University Guangzhou 510631 P. R. China
2. Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631 P. R. China
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
Wiley
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202101017
Reference35 articles.
1. Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy
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4. ZnO Nanowire UV Photodetectors with High Internal Gain
5. Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires
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