High polarization sensitivity passive spin Photogalvanic devices based on 2D perovskite CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction-Reference-Cited by-同舟云学术

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High polarization sensitivity passive spin Photogalvanic devices based on 2D perovskite CsMnBr4/CsSbCl3Br/CsMnBr4 heterojunction

Published:2024-09 Issue: Volume:244 Page:113214
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Qu Junyang,Li Dan,Zhu Yudong,Yan Yue,Pang Yanlan,Liang Chunjun

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference50 articles.

1. 2D graphene-like Pb-free perovskite semiconductor CsSb(Br 1–xIx)4 with quasi-linear electronic dispersion and direct bandgap close to germanium;Guo;ACS Appl. Mater. Interfaces,2022

2. Light-driven extremely nonlinear bulk photogalvanic currents;Neufeld;Phys. Rev. Lett.,2021

3. Direct measurement of helicoid surface states in RhSi using nonlinear optics;Rees;Phys. Rev. Lett.,2021

4. Anomalous bulk photovoltaic effect in ferroelectrics: a quadratic response theory;Kraut;Phys. Rev. B,1979

5. Theory of the bulk photovoltaic effect in pure crystals;von Baltz;Phys. Rev. B,1981

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