Affiliation:
1. Information Materials and Intelligent Sensing Laboratory of Anhui Province Institutes of Physical Science and Information Technology Anhui University Hefei 230601 P. R. China
2. Key Laboratory of Materials Physics Anhui Key Laboratory of Nanomaterials and Nanotechnology Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of Sciences Hefei 230031 P. R. China
3. Information Materials and Intelligent Sensing Laboratory of Anhui Province Industry‐Education‐Research Institute of Advanced Materials and Technology for Integrated Circuits Anhui University Hefei 230601 P. R. China
Abstract
AbstractVan der Waals heterostructures (vdWHs) consisting of 2D materials offer a practical and effective approach for engineering multifunctional, high‐performance photodetectors. However, 2D vdWHs photodetectors based on photoconductive effects require an external power input and are often accompanied by a large dark current, which hinders the development of miniaturization and portability of devices and greatly limits the application of devices in complex environments. Herein, a self‐powered photodetector constructed from an InSe/PtS2 vdWH with an extremely low dark current (≈10−14 A) at zero bias and a large rectification ratio of 5.1 × 103 is reported. Leveraging the robust built‐in electric field of the InSe/PtS2 vdWH, the device demonstrates pronounced photovoltaic effects, characterized by an open‐circuit voltage of 0.395 V and a substantial short‐circuit current of 37.1 nA. Remarkably, a high responsivity and detectivity of 211 mA W−1 and 8.58 × 1012 Jones, an excellent light on/off ratio of 0.8 × 107 , and a fast response time of 465/470 µs are achieved, at zero bias. The device showcases a broadband self‐powered photoresponse spanning from 265 to 1064 nm. This study demonstrates the high potential of the InSe/PtS2 vdWH for broadband self‐powered photodetector applications.