Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy

Author:

Chen Yabin1,Chen Chaoyu2,Kealhofer Robert3,Liu Huili14,Yuan Zhiquan1,Jiang Lili56,Suh Joonki1,Park Joonsuk7,Ko Changhyun1,Choe Hwan Sung1,Avila José2,Zhong Mianzeng89,Wei Zhongming8,Li Jingbo8,Li Shushen8,Gao Hongjun5,Liu Yunqi6,Analytis James34,Xia Qinglin189,Asensio Maria C.2,Wu Junqiao14ORCID

Affiliation:

1. Department of Materials Science and Engineering; University of California; Berkeley CA 94720 USA

2. ANTARES Beamline; Synchrotron SOLEIL; Université Paris-Saclay; L'Orme des Merisiers; Saint Aubin-BP 48 91192 Gif sur Yvette Cedex France

3. Department of Physics; University of California; Berkeley CA 94720 USA

4. Materials Sciences Division; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USA

5. Institute of Physics and University of Chinese Academy of Sciences; Chinese Academy of Sciences; Beijing 100190 China

6. Key Laboratory of Organic Solids; Institute of Chemistry; Chinese Academy of Sciences; Beijing 100190 China

7. Department of Materials Science and Engineering; Stanford University; Stanford CA 94305 USA

8. State Key Laboratory of Superlattices and Microstructures; Institute of Semiconductors; Chinese Academy of Sciences; Beijing 100083 China

9. School of Physics and Electronics; Hunan Key Laboratory for Super-microstructure and Ultrafast Process; Central South University; Changsha 410083 China

Funder

National Science Foundation

China Scholarship Council

National Natural Science Foundation of China

Natural Science Foundation of Hu-nan Province of China

Chicago State University

Centre National de la Recherche Scientifique

Commissariat à l'Energie Atomique et aux Energies Alternatives

Guangdong Longde Group Ltd. (China)

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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