Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO <sub>3–x</sub> Based MIM Device-Reference-Cited by-同舟云学术

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Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO _3–x Based MIM Device

Published:2022-06-22 Issue:11 Volume:8 Page:2200250
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Rudrapal Krishna¹^ORCID,Bhattacharya Gourab²,Adyam Venimadhav²,Roy Chaudhuri Ayan¹³^ORCID

Affiliation:

1. Advanced Technology Development Centre Indian Institute of Technology Kharagpur 721302 India

2. Cryogenic Engineering Indian Institute of Technology Kharagpur Kharagpur 721302 India

3. Materials Science Centre Indian Institute of Technology Kharagpur Kharagpur 721302 India

Funder

Science and Engineering Research Board

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200250

Reference64 articles.

1. Overview of emerging nonvolatile memory technologies

2. Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories

3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

4. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

5. Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

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3. Multibit, Lead‐Free Cs₂SnI₆ Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application;Advanced Functional Materials;2023-12-28

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