Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation

Abstract

Neuromorphic computing that emulates brain behaviors can address the challenge of von Neumann bottleneck and is one of the crucial compositions of next-generation computing. Here, the polynary oxide of amorphous InAlZnO (a-IAZO)-based memristor is employed as electronic synapse with essential properties of biological synapse, including spiking timing-dependent plasticity, paired-pulse facilitation, long-term depression/potentiation, and Pavlov associative memory. Especially, the a-IAZO memristor properties are quite sensitive to the oxygen vacancy content, which exhibit stable switching and narrow distribution of Set/Reset voltage due to the oxygen vacancy content decrease after high-temperature annealing in air, showing promise for memristor performance enhancement. This work promotes the development of high-performance memristors with polynary oxide for neuromorphic computing and opens a path for a-IAZO film application in optoelectronics.