Investigation of Nano‐Gaps in Fractured β‐Ga 2 O 3 Nanomembranes Formed by Uniaxial Strain-Reference-Cited by-同舟云学术

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Investigation of Nano‐Gaps in Fractured β‐Ga 2 O 3 Nanomembranes Formed by Uniaxial Strain

Published:2020-11-30 Issue:2 Volume:7 Page:2000763
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Hasan Md Nazmul¹,Lai Junyu¹,Swinnich Edward¹,Zheng Yixiong¹,Baboukani Behnoosh Sattari¹,Nalam Prathima C.¹,Seo Jung‐Hun¹^ORCID

Affiliation:

1. Department of Materials Design and Innovation University at Buffalo, The State University of New York Buffalo NY 14260 USA

Funder

National Science Foundation

Directorate for Engineering

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000763

Reference33 articles.

1. Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

4. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

5. Development of gallium oxide power devices

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1. Photodetector Based on β-Ga2O3 Nanowires on GaSxSe1-X Solid Solution Substrate;IFMBE Proceedings;2023-09-12

2. Flexible gallium oxide electronics;Semiconductor Science and Technology;2023-04-20

3. A Review on Gallium Oxide Materials from Solution Processes;Nanomaterials;2022-10-14

4. Preparations, properties and applications of gallium oxide nanomaterials – A review;Nano Select;2021-07-18

5. High‐Performance Solar Blind UV Photodetectors Based on Single‐Crystal Si/β‐Ga 2 O 3 p‐n Heterojunction;Advanced Materials Technologies;2021-04-30

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