Photodetector Based on β-Ga2O3 Nanowires on GaSxSe1-X Solid Solution Substrate
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Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-42775-6_26
Reference39 articles.
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2. Weng, W.Y., Hsueh, T., Chang, S., Huang, G., Hsueh, H.: A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film. IEEE Sens. J. 11(4), 999–1003 (2011). https://doi.org/10.1109/JSEN.2010.2062176
3. Higashiwaki, M., et al.: Recent progress in Ga2O3 power devices. Semicond. Sci. Technol. 31(3), 034001 (2016). https://doi.org/10.1088/0268-1242/31/3/03400
4. Kumar, S., Singh, R.: Nanofunctional gallium oxide (Ga2O3) nanowires/nanostructures and their applications in nanodevices. Physica Status Solidi (RRL) – Rapid Research Letters 7(10), 781–792 (2013). https://doi.org/10.1002/pssr.201307253
5. Kuryatkov, V., et al.: Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N. Appl. Phys. Lett. 82(9), 1323–1325 (2003). https://doi.org/10.1063/1.1557325
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